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GTO snubber capacitor in power electronic equipment

Short Description:

Snubber circuits are essential for diodes used in switching circuits. It can save a diode from overvoltage spikes, which may arise during the reverse recovery process.


Product Detail

Product Tags

Technical data

Operating temperature range Max.Operating temperature.,Top,max:  + 85℃Upper category temperature: +85℃Lower category temperature: -40℃
capacitance range

0.22~3μF

Rated voltage

3000V.DC~10000V.DC

Cap.tol

±5%(J) ;±10%(K)

Withstand voltage

1.35Un DC/10S

Dissipation factor

tgδ≤0.001  f=1KHz

Insulation resistance

 C≤0.33μF  RS≥15000 MΩ   (at 20℃ 100V.DC 60S)

C>0.33μF  RS*C≥5000S     (at 20℃ 100V.DC 60S)

Withstand strike current

see datasheet

Life expectancy

100000h(Un; Θhotspot≤70°C)

Reference standard

IEC 61071 ;

Feature

1. Mylar tape, Sealed with resin;

2. Copper nut leads;

3. Resistance to high voltage, low tgδ, low temperature rise;

4. low ESL and ESR;

5. High pulse Current.

Application

1. GTO Snubber.

2. Widely used in power electronic equipment when the peak voltage, peak current absorption protection.

Typical circuit

1

Outline drawing

2

Specification

Un=3000V.DC

Capacitance (μF)

φD (mm)

L(mm)

L1(mm)

ESL(nH)

dv/dt(V/μS)

Ipk(A)

Irms(A)

0.22

35

44

52

25

1100

242

30

0.33

43

44

52

25

1000

330

35

0.47

51

44

52

22

850

399

45

0.68

61

44

52

22

800

544

55

1

74

44

52

20

700

700

65

1.2

80

44

52

20

650

780

75

1.5

52

70

84

30

600

900

45

2.0

60

70

84

30

500

1000

55

3.0

73

70

84

30

400

1200

65

4.0

83

70

84

30

350

1400

70

Un=6000V.DC

Capacitance (μF)

φD (mm)

L(mm)

L1(mm)

ESL(nH)

dv/dt(V/μS)

Ipk(A)

Irms(A)

0.22

43

60

72

25

1500

330

35

0.33

52

60

72

25

1200

396

45

0.47

62

60

72

25

1000

470

50

0.68

74

60

72

22

900

612

60

1

90

60

72

22

800

900

75

 

Un=7000V.DC

Capacitance (μF)

φD (mm)

L(mm)

L1(mm)

ESL(nH)

dv/dt(V/μS)

Ipk(A)

Irms(A)

0.22

45

57

72

25

1100

242

30

0.68

36

80

92

28

1000

680

25

1.0

43

80

92

28

850

850

30

1.5

52

80

92

25

800

1200

35

1.8

57

80

92

25

700

1260

40

2.0

60

80

92

23

650

1300

45

3.0

73

80

92

22

500

1500

50

 

Un=8000V.DC

Capacitance(μF)

φD (mm)

L(mm)

L1(mm)

ESL(nH)

dv/dt(V/μS)

Ipk(A)

Irms(A)

0.33

35

90

102

30

1100

363

25

0.47

41

90

102

28

1000

470

30

0.68

49

90

102

28

850

578

35

1

60

90

102

25

800

800

40

1.5

72

90

102

25

700

1050

45

2.0

83

90

102

25

650

1300

50

 

Un=10000V.DC

Capacitance (μF)

φD (mm)

L(mm)

L1(mm)

ESL(nH)

dv/dt(V/μS)

Ipk(A)

Irms(A)

0.33

45

114

123

35

1500

495

30

0.47

54

114

123

35

1300

611

35

0.68

65

114

123

35

1200

816

40

1

78

114

123

30

1000

1000

55

1.5

95

114

123

30

800

1200

70


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